BSC016N04LS G

BSC016N04LSG MOSFET OptiMOS™3Power-Transistor,40V SuperSO8 8 Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%Avalanchetested •Pb-freeplating;RoHScompliant; •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 40 V RDS(on),max 1.6 mΩ ID 100 A Type/OrderingCode Package BSC016N04LS G PG-TDSON-8 1) 5 6 2 Marking 016N04LS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-02-07 OptiMOS™3Power-Transistor,40V BSC016N04LSG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2020-02-07 OptiMOS™3Power-Transistor,40V BSC016N04LSG 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 100 100 100 100 31 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 50 A TC=25°C EAS - - 295 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 139 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm2 cooling area1) Values Min. Typ. Max. RthJC - - 0.9 K/W - RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-02-07 OptiMOS™3Power-Transistor,40V BSC016N04LSG 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=85µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.8 1.3 2.3 1.6 mΩ VGS=4.5V,ID=50A VGS=10V,ID=50A Gate resistance RG - 1.5 - Ω - Transconductance gfs 95 190 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 8900 12000 pF VGS=0V,VDS=20V,f=1MHz Output capacitance1) Coss - 1800 2400 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 100 - pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 14 - ns VDD=20V,VGS=10V,ID=30A, RG=1.6Ω Rise time tr - 7.6 - ns VDD=20V,VGS=10V,ID=30A, RG=1.6Ω Turn-off delay time td(off) - 56 - ns VDD=20V,VGS=10V,ID=30A, RG=1.6Ω Fall time tf - 9.4 - ns VDD=20V,VGS=10V,ID=30A, RG=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 25 - nC VDD=20V,ID=30A,VGS=0to10V Gate charge at threshold Qg(th) - 14 - nC VDD=20V,ID=30A,VGS=0to10V Gate to drain charge Qgd - 11 - nC VDD=20V,ID=30A,VGS=0to10V Switching charge Qsw - 23 - nC VDD=20V,ID=30A,VGS=0to10V Gate charge total Qg - 113 150 nC VDD=20V,ID=30A,VGS=0to10V Gate plateau voltage Vplateau - 2.9 - V VDD=20V,ID=30A,VGS=0to10V Gate charge total Qg - 54 - nC VDD=20V,ID=30A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 106 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 69 - nC VDD=20V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-02-07 OptiMOS™3Power-Transistor,40V BSC016N04LSG Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 100 A TC=25°C - 400 A TC=25°C - 0.8 1.2 V VGS=0V,IF=50A,Tj=25°C - 125 - nC VR=20V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.1,2020-02-07 OptiMOS™3Power-Transistor,40V BSC016N04LSG 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 160 120 140 100 120 80 ID[A] Ptot[W] 100 80 60 60 40 40 20 20 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 10 µs 1 µs 100 µs 1 ms 102 10 ms 100 ZthJC[K/W] ID[A] DC 1 10 0.5 0.2 0.1 10-1 0.05 100 0.02 0.01 -1 10 10-1 100 101 102 10 single pulse -2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-02-07 OptiMOS™3Power-Transistor,40V BSC016N04LSG Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 600 3.5 5V 4.5 V 10 V 3.0 500 3.5 V 2.5 RDS(on)[mΩ] 400 ID[A] 4V 300 4V 2.0 4.5 V 5V 1.5 10 V 200 1.0 3.5 V 100 0.5 3.2 V 3V 0 2.8 V 0 1 2 0.0 3 0 10 20 VDS[V] 30 RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 300 300 250 250 200 200 gfs[S] ID[A] ID=f(VDS);Tj=25°C;parameter:VGS 150 100 50 50 150 °C 0 1 2 25 °C 3 4 5 0 0 VGS[V] 40 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 50 150 100 0 40 ID[A] gfs=f(ID);Tj=25°C 7 Rev.2.1,2020-02-07 OptiMOS™3Power-Transistor,40V BSC016N04LSG Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 1.5 98 % 1.5 VGS(th)[V] RDS(on)[mΩ] 2.0 typ 1.0 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=85µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 °C 150 °C 25 °C, 98% 150 °C, 98% 104 Ciss Coss IF[A] C[pF] 102 3 10 101 Crss 102 101 0 10 20 30 40 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-02-07 OptiMOS™3Power-Transistor,40V BSC016N04LSG Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 20 V 10 8V 100 °C 8 VGS[V] IAV[A] 125 °C 32 V 25 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 40 80 120 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 45 40 VBR(DSS)[V] 35 30 25 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-02-07 OptiMOS™3Power-Transistor,40V BSC016N04LSG 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.1,2020-02-07 OptiMOS™3Power-Transistor,40V BSC016N04LSG PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.1,2020-02-07 OptiMOS™ 3 Power-Transistor , 40 V BSC016N04LS G Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.1, 2020-02-07 OptiMOS™ 3 Power-Transistor , 40 V BSC016N04LS G Revision History BSC016N04LS G Revision: 2020-02-07, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2020-02-07 Update package drawings and footnotes Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.1, 2020-02-07